Diamond films with heat-resisting ohmic electrodes

Details Diamond films with heat-resisting ohmic electrodes Diamond films with heat-resisting ohmic electrodes

1993-04-22

1994-05-03

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257 77, 257754, 257755, 257756, 423446, 437100, 437186, H01L 2348

Patent

active

053090004

ABSTRACT:
A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.

REFERENCES:
patent: 5002899 (1991-03-01), Geis et al.
patent: 5086014 (1992-02-01), Miyata et al.
patent: 5173761 (1992-12-01), Dreifus et al.
patent: 5210431 (1993-05-01), Kimoto et al.

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