Method of manufacturing a multilayered metallization structure i

Details Method of manufacturing a multilayered metallization structure i Method of manufacturing a multilayered metallization structure i

1991-02-13

1993-03-09

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437192, 437203, H01L 2128, H01L 21283

Patent

active

051927144

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.

REFERENCES:
patent: 4448800 (1984-05-01), Ehara et al.
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4948755 (1990-08-01), Mo
patent: 5017317 (1991-05-01), Marcus
patent: 5068207 (1991-11-01), Manocha et al.
patent: 5069749 (1991-12-01), Gutierrez
patent: 5104694 (1992-04-01), Saito et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a multilayered metallization structure i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a multilayered metallization structure i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a multilayered metallization structure i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-211256