Method for producing a semiconductor laser device

Details Method for producing a semiconductor laser device Method for producing a semiconductor laser device

1992-01-21

1993-03-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437128, 437133, H01L 2120

Patent

active

051927110

ABSTRACT:
A visible light semiconductor laser device has a double heterojunction structure comprising AlGaInP series semiconductors which is produced on a substrate having an electrode on its rear surface. A a p type GaInP buffer layer is provided between a p type GaAs contact layer and a p type AlGaInP cladding layer. The buffer layer has a constant composition ratio and the energy band gap is smaller at the side of the p type GaAs contact layer than at the p type AlGaInP cladding layer. Thus, an energy band discontinuity between the p type GaAs contact layer and the p type AlGaInP cladding layer are relaxed for operation of the laser at low voltage. The laser is produced by varying the growth conditions, such as temperature or V/III ratio during growth, of the buffer layer to vary the energy band gap within the buffer layer.

REFERENCES:
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patent: 5053356 (1991-10-01), Mitsui et al.
A. Gomyo et al., "Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy", Applied Physics Letters 50(11), Mar. 16, 1987, pp. 673-675.
K. Itaya et al., "A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Hetero Barrier Blocking", Extended Abstracts of the 20th Conference on Solid State Devices and Materials, 1988, pp. 307-310.

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