Patent
1982-12-28
1986-05-20
James, Andrew J.
357 45, 357 49, 357 50, 357 59, 357 4, 357 2314, 357 236, 357 239, 357 235, H01L 2978
Patent
active
045905045
ABSTRACT:
A nonvolatile memory cell (16) is fabricated on a substrate (12) and includes a source region (46) and drain regions (48, 50 and 52). Step oxides (40, 42 and 44) are fabricated respectively over the regions (46, 48 and 52). A gate oxide (58) is formed between the step oxides (40 and 42). A thin oxide tunneling element (74) is fabricated between the step oxides (42, 44) and over the drain region (50). A floating gate (38) comprising a polysilicon layer is fabricated over the step oxides (40, 42, 44), the gate oxide (58) and the tunneling element (74). An insulation layer (36) is fabricated over the floating gate (38). Finally, a control gate (34) is fabricated over the insulating layer (36) to provide capacitive coupling to the floating gate (38). The nonvolatile memory cell (16) has enhanced capacitive coupling between the control gate (34) and the floating gate (38) while it has a minimum of capacitive coupling between the floating gate (38) and the source and drain regions (46, 48, 50, 52) in the substrate (12).
REFERENCES:
patent: 4023195 (1977-05-01), Richman
patent: 4432006 (1984-02-01), Takei
patent: 4451904 (1984-05-01), Sugiura et al.
patent: 4489338 (1984-12-01), Voncken
James Andrew J.
Mintel William A.
Thomson Components - Mostek Corporation
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