Fishing – trapping – and vermin destroying
Patent
1992-04-24
1993-03-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 60, 437919, H01L 2172
Patent
active
051927047
ABSTRACT:
A memory cell is disclosed which comprises a filament channel transistor and a ferroelectric capacitor formed on a surface of a semiconductor substrate. The transistor comprises a substantially cylindrical channel filament which is formed substantially perpendicular to the substrate surface between the surface and the capacitor. The capacitor comprises a storage layer which can be formed of a ferroelectric material such that the memory cell is nonvolatile. The storage layer may also comprise a high dielectric material such that the memory cell is operable as a dynamic random access memory cell.
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Clark David R.
McDavid James M.
Braden Stanton C.
Chaudhari C.
Donaldson Richard L.
Hearn Brian E.
Hiller William E.
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