Method of making tungsten contact core stack capacitor

Details Method of making tungsten contact core stack capacitor Method of making tungsten contact core stack capacitor

1991-10-31

1993-03-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437192, 437919, H01L 2170

Patent

active

051927039

ABSTRACT:
The invention is a product and method for forming the same comprising a storage contact capacitor of a DRAM device wherein the storage node capacitor plate comprises first and second capacitor portions. The first portion is a self-aligned Tungsten and TiN core. In a first embodiment the second portion is a storage node polysilicon deposited and subjected to an insitu phosphorus diffusion doping. In a second embodiment the second portion comprises tungsten fingers formed elevationally and horizontally to overlie the tungsten and TiN core. Portions of TiN provide spacing between adjacent tungsten fingers. An upper polysilicon layer functions as the upper capacitor plate and is insulated from the lower capacitor plate by a dielectric layer.

REFERENCES:
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4970564 (1990-11-01), Kimura et al.
patent: 4974040 (1991-11-01), Taguchi et al.
patent: 5005072 (1991-04-01), Gonzalez
patent: 5006481 (1991-04-01), Chan et al.
patent: 5045494 (1991-09-01), Choi et al.
Ema et al. "3-Dimensional Stacked Capacitor Cell for 16M and 64M Drams", IEDM Dec. 1988, pp. 592-595.

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