Stacked semiconductor device

Details Stacked semiconductor device Stacked semiconductor device

1987-09-08

1989-01-10

Carroll, J.

357 4, 357 231, 357 237, 357 41, 357 49, 357 55, 357 56, 357 59, H01L 2702, H01L 2906, H01L 2904, H01L 2978

Patent

active

047977230

ABSTRACT:
A stacked semiconductor device includes a first integrated circuit formed on the principal surface of a semiconductor layer and containing active elements, and a second integrated circuit formed on the first integrated circuit through an insulation layer and containing active elements. The second integrated circuit is formed on that part of the surface of the first integrated circuit which is exclusive of selected active elements, to establish an open space for heat dissipation.

REFERENCES:
patent: 3564358 (1971-02-01), Hahnlein
patent: 4286278 (1981-08-01), Lorenze, Jr. et al.
patent: 4297721 (1981-10-01), McKenny et al.
patent: 4323912 (1982-04-01), Koike et al.
patent: 4348611 (1982-09-01), Ruppel et al.
patent: 4363963 (1982-12-01), Ando
patent: 4369458 (1983-01-01), Thomas et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4429325 (1984-01-01), Takasahi et al.
patent: 4498226 (1985-02-01), Inoue et al.
patent: 4500905 (1985-02-01), Shibata
patent: 4571609 (1986-02-01), Hatano
H. W. Lam et al., "MOSFETs Fabricated in (100) Single Crystal Silicon-on-Oxide Obtained by a Laser Induced Lateral Seeding Technique", 1980 IEEE IEDM Technical Digest (Dec. 1980), pp. 559-561.

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