Hot charge-carrier transistors

Details Hot charge-carrier transistors Hot charge-carrier transistors

1987-05-05

1989-01-10

James, Andrew J.

357 16, 357 4, H01L 2972, H01L 29205

Patent

active

047977221

ABSTRACT:
Current flow through the base region of a hot charge-carrier transistor is by hot majority charge-carriers of one conductivity type (i.e., hot electrons for a hot electron transistor) which are injected into the base region at an emitter-base carrier region. In accordance with the invention a low base resistance is achieved by forming the base region as alternate layers of semiconductor material (for example silicon) and metal-based material (for example epitaxial cobalt or nickel silicide) which has a higher conductivity than the semiconductor material. The base-collector barrier is adjoined by a semiconductor layer of the base region, and the (or each) metal-based layer in the vicinity of the emitter-base carrier and/or the base-collector barrier is sufficiently thin (for example about 1nm or less) to permit quantum mechanical tunnelling. This aids efficient transmission of the hot charge-carriers through the base region and over the base-collector barrier. A high collection efficiency can be maintained by providing a bulk unipolar diode as the base-collector barrier formed with the adjoining semiconductor base-region layer. There may be a thicker central metal-based layer in the base region. The emitter-base barrier can be made sufficiently high that the average energy of the hot charge-carriers injected into the base region is significantly higher than potential barriers formed at heterojunction interfaces of the metal-based and semiconductor layers.

REFERENCES:
patent: 4665412 (1987-05-01), Ohkawa et al.
patent: 4695857 (1987-09-01), Bala et al.

Affiliated with

Also associated with

Rating

Hot charge-carrier transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hot charge-carrier transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hot charge-carrier transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2110828