Method of making field effect transistor

Details Method of making field effect transistor Method of making field effect transistor

1992-01-30

1993-03-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 40, 437 22, H01L 2170

Patent

active

051927004

ABSTRACT:
A field effect transistor including a semi-insulating semiconductor substrate, a first conductivity type semiconductor layer disposed on the substrate and forming a heterojunction with the substrate, second conductivity type spaced apart source and drain regions extending through the layer into the substrate, a metallic gate disposed on the layer between the source and drain regions, and a second conductivity type channel disposed in the substrate extending between the source and drain regions and forming a pn heterojunction with the layer for reducing leakage current from the channel to the gate. The second conductivity type channel is produced by ion implantation, and the implantation conditions are controlled as a mechanism for controllably establishing a threshold voltage for the field effect transistor.

REFERENCES:
patent: 4434013 (1984-02-01), Bol
patent: 4590502 (1986-05-01), Morkoc
patent: 4662058 (1987-05-01), Cinillo, Jr. et al.
patent: 4839703 (1989-06-01), Ohata et al.
"A High-Current Drivability i-AlGaAs
-GaAs Doped-Channel MIS-Like FET (DMT)," by Hida et al., IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986.

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