Semiconductor device capable of high speed operation and being i

Details Semiconductor device capable of high speed operation and being i Semiconductor device capable of high speed operation and being i

1996-09-25

1997-11-25

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257390, H01L 2348

Patent

active

056915748

ABSTRACT:
In a semiconductor device including a plurality of semiconductor cells each of which has a diffusion area, a first metal layer, and a connecting portion, the first metal layer overlies whole of the diffusion area while the connecting portion covers almost whole of the diffusion area. The semiconductor device further includes a second metal layer, and first and second power supply lines. The second metal layer has an interconnecting area positioned above the semiconductor cells and an overlapping area overlapping on the first metal layer. Each of the first and the second power supply lines consists of the overlapping area. The semiconductor cells are electrically connected to each other by a third metal layer and the interconnecting area of the second metal layer.

REFERENCES:
patent: 4816895 (1989-03-01), Kikkawa
patent: 5079614 (1992-01-01), Khatakhotan
patent: 5237199 (1993-08-01), Morita

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