Solid state imaging device having high sensitivity and exhibitin

Details Solid state imaging device having high sensitivity and exhibitin Solid state imaging device having high sensitivity and exhibitin

1996-04-30

1997-11-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257432, H01L 27148, H01L 29768, H01L 310232

Patent

active

056915489

ABSTRACT:
There are provided a solid state imaging device having high sensitivity and exhibiting high degree of light utilization and a method of manufacturing the same. An insulating film 42, a transfer electrode 43, a light shielding film 44, a protective film 45, and a flat layer 51 are formed above a layer having a photoelectric conversion portion, and a concave lens layer 52 is formed on the flat layer 51 to a lattice pattern. The concave lens layer 52 of the lattice pattern is hot melted for conversion into a concave type micro-lens 52. A resin layer 53 having a refractive index smaller than that of the concave lens 52, a buffer layer 54, and a convex type micro-lens 57 are sequentially formed above the concave type micro-lens 52. The concave type micro-lens 52 functions to bring light rays focused by the convex type micro-lens 57 to a position close to light incident vertically upon the photoelectric conversion portion 41.

REFERENCES:
patent: 5371397 (1994-12-01), Maegawa et al.

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