Solid state zone recrystallization of semiconductor material on

Details Solid state zone recrystallization of semiconductor material on Solid state zone recrystallization of semiconductor material on

1984-03-26

1986-05-20

Lesmes, George F.

Stock material or miscellaneous articles

Composite

Of silicon containing

428700, 428448, B32B 904, B32B 900, B32B 1900

Patent

active

045901309

ABSTRACT:
Dielectrically isolated, thin single crystal films of semiconductor material suitable for integrated circuit applications and preparation thereof by solid state zone recrystallization of a polycrystalline layer of the semiconductor material are disclosed.

REFERENCES:
patent: 3393088 (1968-07-01), Manasevit et al.
patent: 3414434 (1968-12-01), Manasevit
patent: 4177321 (1979-12-01), Nushizawa
patent: 4320178 (1982-03-01), Chemla et al.
patent: 4442178 (1984-04-01), Kimura et al.
patent: 4447497 (1984-05-01), Manasevit

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