Silicon charge-handling device employing SiC electrodes

Details Silicon charge-handling device employing SiC electrodes Silicon charge-handling device employing SiC electrodes

1978-12-22

1980-02-26

Tupman, W. C.

Metal working

Method of mechanical manufacture

Electrical device making

357 24, 357 59, B01J 1700

Patent

active

041898265

ABSTRACT:
A solid state imaging device is formed of a bulk of monocrystalline silicon which has been suitably doped. A transparent layer of SiO.sub.2 overlays the bulk silicon, and atop the SiO.sub.2 layer is at least one pattern of doped SiC electrodes. Successive patterns of SiC electrodes are insulated from each other by SiO.sub.2. The SiC and SiO.sub.2, being derivatives of silicon, passivate the bulk and serve, respectively, as transparent electrodes and transparent support for such electrodes.

REFERENCES:
patent: 3497773 (1970-02-01), Kisinko
patent: 3622382 (1971-11-01), Brack
patent: 3728590 (1973-04-01), Kim
patent: 3896485 (1975-07-01), Early

Affiliated with

Also associated with

Rating

Silicon charge-handling device employing SiC electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon charge-handling device employing SiC electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon charge-handling device employing SiC electrodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2107862