Power transistor with spaced subtransistors having individual co

Details Power transistor with spaced subtransistors having individual co Power transistor with spaced subtransistors having individual co

1985-12-23

1987-07-21

Larkins, William D.

357 28, 357 44, 357 46, H01L 2972, H01L 2352, H01L 2710, H01L 2908

Patent

active

046821970

ABSTRACT:
This integrated semiconductor device aims at drastic reduction of the direct secondary breakdown phenomena and has a plurality of side-by-side elementary transistors forming an interdigited structure. To reduce the thermal interaction between the elementary transistors, the latter are spaced apart from one another by a distance approximately equal to the width of one elementary transistor and are driven by current sources. Spacing apart reduces electrothermal interaction. Further, in order to minimize the device area requirements, the space between any two adjacent elementary transistors is made to accommodate drive transistors operating as current sources, or the elementary transistors of the complementary stage where the device forms a class B output stage, the two output transistors whereof are alternatively switched on.

REFERENCES:
patent: 4012764 (1977-03-01), Satonaka
patent: 4276516 (1981-06-01), Congdon
patent: 4371792 (1983-02-01), Dobkin
Solid State Electronics, 1977, vol. 20, p. 635 Bosch "Anomalous Current Distributions in Power Transistors".

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