Method for fabricating an electrical connect above an integrated

Details Method for fabricating an electrical connect above an integrated Method for fabricating an electrical connect above an integrated

1996-02-13

1997-11-25

Tsai, Jey

Fishing, trapping, and vermin destroying

437915, 148DIG164, H01L 2144

Patent

active

056912390

ABSTRACT:
A transfer metal configuration and fabrication process possessing increased probability of intersecting a transverse metallization level are presented, without employing an increase in actual metal thickness. The transfer metal is configured with a non-rectangular transverse cross-section such that the thickness of the electrical connect remains the same, but the transverse contact area of the exposed metal is increased. The entire transfer metal may have the same transverse cross-sectional configuration or have portions with different transverse configurations. If different configurations are employed, each portion of the transfer metal to be transversely intersected has the enhanced cross-sectional configuration. A tiered transverse configuration is presented which facilitates electrical connection of the transfer metal to a metal level on a face of a semiconductor cube structure.

REFERENCES:
patent: 5055896 (1991-10-01), Williams et al.
patent: 5427980 (1995-06-01), Kim

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