Process of forming channel stopper exactly nested in area assign

Details Process of forming channel stopper exactly nested in area assign Process of forming channel stopper exactly nested in area assign

1996-04-22

1997-11-25

Fourson, George

Fishing, trapping, and vermin destroying

437 80, H01L 2176

Patent

active

056912331

ABSTRACT:
An obstacle layer is grown on an inner surface of a mask structure defining a first opening over a first area assigned to a thick field oxide layer during a growth of the thick field oxide layer, and prevents a silicon substrate beneath a peripheral area of the thick field oxide layer from a dopant impurity implanted through the thick field oxide layer into the silicon substrate beneath the central area of the thick field oxide layer so that a channel stopper is never exposed to a major surface of the silicon substrate outside of the thick field oxide layer.

REFERENCES:
patent: 4840920 (1989-06-01), Suda
patent: 5208181 (1993-05-01), Chi
patent: 5372951 (1994-12-01), Anjum et al.
"Isolation Characteristics of Improvement LOCUS Using ITF".

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