Method of manufacturing silicon on insulating substrate

Details Method of manufacturing silicon on insulating substrate Method of manufacturing silicon on insulating substrate

1997-01-07

1997-11-25

Fourson, George R.

Fishing, trapping, and vermin destroying

148DIG12, H01L 2176

Patent

active

056912315

ABSTRACT:
A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An insulation film is buried in portions of the bonding surface of one of the two silicon single crystal substrates, and in addition, a polycrystal silicon layer is formed on the bonding surface of the silicon single crystal substrate on the side into which the insulation film is buried.

REFERENCES:
patent: 4963505 (1990-10-01), Fujii et al.
patent: 4968628 (1990-11-01), Delgado et al.
patent: 5356827 (1994-10-01), Ohoka
patent: 5529947 (1996-06-01), Okonogi
patent: 5573972 (1996-11-01), Kobayashi

Affiliated with

Also associated with

Rating

Method of manufacturing silicon on insulating substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing silicon on insulating substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing silicon on insulating substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2106423