Process of fabricating dynamic random access memory cell having

Details Process of fabricating dynamic random access memory cell having Process of fabricating dynamic random access memory cell having

1997-01-16

1997-11-25

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, 148DIG14, H01L 2170

Patent

active

056912293

ABSTRACT:
A cylindrical storage node electrode increases the surface area and, accordingly, the capacitance of a storage capacitor of a dynamic random access memory cell, and a silicon nitride layer is used as an etching stopper which is removed before completion of the storage capacitor so that hydrogen surely cures crystal defects during a hydrogen treatment carried out after patterning metal wirings.

REFERENCES:
patent: 5273925 (1993-12-01), Yamanaka
patent: 5387533 (1995-02-01), Kim
patent: 5491103 (1996-02-01), Ahn et al.
patent: 5492849 (1996-02-01), Park

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