Method of manufacturing semiconductor integrated circuit device

Details Method of manufacturing semiconductor integrated circuit device Method of manufacturing semiconductor integrated circuit device

1996-11-12

1997-11-25

Tsai, Jey

Fishing, trapping, and vermin destroying

437 60, 437919, 437225, H01L 218242

Patent

active

056912226

ABSTRACT:
A method of manufacturing a semiconductor integrated circuit device which stores information by storing charges in a capacitor portion formed on a semiconductor substrate is provided. This method includes the steps of depositing a conductive film for forming a lower electrode of storage node capacitor portion on an insulating interlayer film formed with a contact hole for forming a contact that connects the capacitor portion with the substrate, depositing a cap oxide film on the conductive film and planarizing the cap oxide film, applying a resist on the planarized cap oxide film to a uniform thickness and forming a pattern mask of the storage node capacitor portion from the resist, etching the cap oxide film and the conductive film by using the pattern mask as a mask, and forming a lower electrode of the storage node capacitor portion by removing the cap oxide film.

REFERENCES:
patent: 5418180 (1995-05-01), Brown
patent: 5443993 (1995-08-01), Park et al.
patent: 5478769 (1995-12-01), Lim

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