Method for manufacturing semiconductor memory device having a st

Details Method for manufacturing semiconductor memory device having a st Method for manufacturing semiconductor memory device having a st

1996-08-15

1997-11-25

Tsai, Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

056912218

ABSTRACT:
A method for manufacturing a semiconductor memory device comprising the steps of forming a switching transistor including a gate insulating film, a gate electrode, and source and drain regions on a semiconductor substrate; forming a first insulating film on the substrate including the switching transistor; selectively etching the first insulating film to form a contact hole exposing the source or drain region of the switching transistor; forming a second insulating film on the substrate to fill the contact hole; patterning the second insulating film and the first insulating film to a predetermined pattern to thereby form a second insulating film pattern and a first insulating film pattern; selectively removing the first insulating film pattern; forming a conductive layer on an entire surface of the second insulating film pattern; selectively etching the conductive layer by using the second insulating film pattern as a mask, to thereby form a capacitor storage electrode; removing the second insulating film pattern; forming a capacitor dielectric film on an entire surface of the capacitor storage electrode; and forming a capacitor plate electrode on an entire surface of the capacitor dielectric film.

REFERENCES:
patent: 4742018 (1988-05-01), Kimura et al.
patent: 5401681 (1995-03-01), Dennison
patent: 5552334 (1996-09-01), Tseng
patent: 5580813 (1996-12-01), Hachisuka et al.

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