Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1996-10-04

1997-11-25

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437918, 437979, 437 28, 148DIG136, 148DIG163, H01L 21265

Patent

active

056912145

ABSTRACT:
A method of manufacturing a semiconductor device furnished on a silicon substrate with a bipolar element part and a resistance element part formed of an impurity diffusion layer, having (a) a step of forming a first oxide film on said silicon substrate and on the component elements formed on said substrate throughout the entire surface thereof, (b) a step of selectively and sequentially removing the part of said first oxide film corresponding to the base region of said bipolar element part and the surface of said silicon substrate directly underlying said first oxide film and, at the same time, cleaning the freshly exposed surface, (c) a step of forming a second oxide film on said silicon substrate and said component elements formed thereon throughout the entire surface thereof thereby differentiating the thickness of the oxide film formed on said base region and the thickness of the oxide film formed on said resistance element part, and (d) a step of selectively and instantaneously implanting an ion into said bipolar element part and said resistance element part.

REFERENCES:
patent: 4418469 (1983-12-01), Fujita
patent: 4826780 (1989-05-01), Takemoto et al.
patent: 4898837 (1990-02-01), Takeda et al.
patent: 5284794 (1994-02-01), Isobe et al.
Ultraspeed Digital Devices, Series 1, `Ultraspeed Bipolar Devices,` Para. 4.4.1, pp. 90-91, published by Baifukan.

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