Semiconductor optical device with light controlling layer of sup

Details Semiconductor optical device with light controlling layer of sup Semiconductor optical device with light controlling layer of sup

1994-06-27

1996-03-12

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 20, 372 26, H01S 318

Patent

active

054992591

ABSTRACT:
A semiconductor optical device such as a light modulator or a tunable laser emitting diode has either light absorbing/transmitting layer, light modulation layer or tuning layer responsive to an electric field for changing the intensity or the wavelength of an output light, and the light absorbing/transmitting layer, the light modulation layer or the tuning layer is implemented by a super-lattice structure formed by using a first compound semiconductor material and a second compound semiconductor material, wherein the second compound semiconductor material is larger in electron affinity as well as the total of electron affinity and energy band gap than the first compound semiconductor material so that a large extinction ratio or a wide variation in wavelength is achieved.

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