Insulated gate device with configured emitter contact pad

Details Insulated gate device with configured emitter contact pad Insulated gate device with configured emitter contact pad

1985-09-30

1987-07-21

Clawson, Jr., Joseph E.

357 2314, 357 41, 357 52, 357 68, H01L 2978

Patent

active

046821953

ABSTRACT:
The construction of a semiconductor insulated gate device (IGT) is altered to avoid cell latching problems assisted with "hot spot" sites where an atypically high density reverse current tends to flow. IGT cells adjacent these sites are totally or partially disabled by eliminating emitter regions therein to thereby remove any emitter-base junctions from the paths along which the high density reverse current flows. Also the area of emitter electrode ohmic contact is increased at these "hot spot" sites to effectively divert reverse from neighboring, forward current conducting, active cells and thus reduce the density of reverse flow therethrough to safe levels.

REFERENCES:
patent: 4532534 (1985-07-01), Ford et al.
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4631564 (1986-12-01), Neilson et al.

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