Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1977-10-27
1980-10-14
Munson, Gene M.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 59, 357 91, 307221D, 29589, H01L 2978, H01L 2904, G11C 1928
Patent
active
042284457
ABSTRACT:
A charge coupled device having geometries suitable for fabrication in high density packages (64,000 bits per chip-1,000,000 bits per chip) is comprised of a semiconductor substrate having dopant impurity atoms of a first type and a first surface. A charge transfer channel lies in the substrate near the first surface, and it is overlaid by an insulating layer of non-uniform thickness. A plurality of first and second electrodes lie on the insulating layer traversely to the channel. A well region of dopant impurity atoms of a second type opposite to the first type lies under each of the electrodes. The non-uniform insulating layer underlies each of the first electrodes by a first uniform thickness, underlies the second electrodes by a second uniform thickness, and separates the each of the first and second electrodes by approximately the second thickness. The second thickness is 20%-60% greater than the first thickness to greatly reduce inter-electrode shorts in high density packages. A shallow layer of dopant impurity atoms of the second type may be provided under the second electrodes to compensate for shift flatband voltage shifts due to the thick insulating layer.
REFERENCES:
patent: 3789267 (1974-01-01), Krambeck et al.
patent: 3796932 (1974-03-01), Amelio et al.
patent: 3852799 (1974-12-01), Walden
patent: 3950188 (1976-04-01), Bower
patent: 4035906 (1977-07-01), Tasch et al.
patent: 4047215 (1977-09-01), Frye et al.
patent: 4060738 (1977-11-01), Tasch et al.
Chatterjee Pallab K.
Tasch, Jr. Al F.
Donaldson Richard L.
Munson Gene M.
Myers Jeffrey Van
Sharp Melvin S.
Texas Instruments Incorporated
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