Semiconductor device

Details Semiconductor device Semiconductor device

1978-09-29

1980-10-14

Wojciechowicz, Edward J.

357 23, 357 13, 357 45, H01L 2980

Patent

active

042284449

ABSTRACT:
On a semiconductor substrate (or layer) of one conductivity type, a semiconductor layer of the opposite conductivity type is formed and a source and a drain region of the same conductivity type as the semiconductor substrate are formed in the semiconductor layer. Junctions are respectively formed between the source and drain regions and the semiconductor layer at such positions where punch-through may easily occur between the source and drain regions and the semiconductor substrate when operating voltages are applied to these regions. A local potential distribution generation electrode, which makes an ohmic contact with the semiconductor layer, is formed between the source and drain regions. By applying voltages to both the local potential distribution generation electrode and a drain electrode at substantially the same time, a potential barrier normally formed in the semiconductor layer is removed, thereby to inject carriers from the source region to the drain region through the semiconductor substrate (or layer).

REFERENCES:
patent: 3896483 (1975-07-01), Whelan
patent: 3988761 (1976-10-01), Kanazawa

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