Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1995-03-30
1997-11-25
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117 28, 117 30, C30B 1520
Patent
active
056907311
ABSTRACT:
A method of growing a crack-free single crystal is disclosed which comprises heating raw materials in a crucible to thereby obtain a melt of the raw materials, contacting a lower end of a seed crystal with the melt and pulling the seed crystal to thereby grow a single crystal, and wherein the melt of the crucible flows from its surface toward its inner part inside the crucible by convection at a position locating outside a region where the growth of the single crystal occurs. This flow control can be achieved by, for example, surrounding the crucible with a heat insulation refractory composed of a pair of semicylindrical refractories disposed so as to provide a circular cross section with differently sized gaps. In the above-mentioned method, the seed crystal may be rotated during a shoulder growth in which the single crystal has its diameter increased from that of the seed crystal to a target diameter at a rotation rate greater than that during a subsequent cylindrical body growth. Further, in the above-mentioned method, during the shoulder growth, the single crystal may have a solid-liquid interface configuration changed from a convex toward the melt to a flatness or a convex toward the seed crystal.
REFERENCES:
"Crystal Pulling Using ACPT"; Scheel, et al; J. of Cryst Growth 49 (1988) pp. 291-296.
"Crystal Rotation In Crystal Growth From Melt"; Scheel, et al; IBM Technical Disclosure Bulletin
Kazumasa Takagi and Mitsuru Ishii, "GGG" in `Specimen Preparation and Machining` Experimental Physics Course, No. 13, Kyoritsu Shuppan Co., Ltd., 1981, pp.373 to 385.
B Cockayne and J.M. Roslington, "The Dislocation-Free Growth of Gadolinium Gallium Garnet Single Crystals" Journal of Materials Sciences 8, pp.601-605, 1973.
Ishibashi Hiroyuki
Kurashige Kazuhisa
Kurata Yasushi
Garrett Felisa
Hitachi Chemical Company Ltd.
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