Semiconductor non-volatile memory device

Details Semiconductor non-volatile memory device Semiconductor non-volatile memory device

1991-10-15

1993-11-30

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

257314, 257326, H01L 2978, G11C 1700

Patent

active

052671950

ABSTRACT:
A semiconductor non-volatile memory device with a memory cell has a memory transistor formed on a semiconductor substrate and a select transistor composed of a thin film transistor provided on an upper surface of the memory transistor and connected in series with the memory transistor. The space occupied by the memory cell is that of one transistor whereby the size of the overall memory cell can be made smaller.

REFERENCES:
patent: 4964080 (1990-10-01), Tzeng
patent: 5057885 (1991-10-01), Matsumoto et al.
Patent Abstracts of Japan, vol. 10, No. 248, Aug. 26, 1986.
Patent Abstracts of Japan, vol. 12, No. 150, May 10, 1988.

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