Semiconductor device organic insulator film

Details Semiconductor device organic insulator film Semiconductor device organic insulator film

1997-12-08

2000-09-26

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

438623, 438780, 438790, H01L 23532

Patent

active

061246417

ABSTRACT:
An interlayer insulating film of a semiconductor device is made of a material in which silicon atoms are main elements, and each of the silicon atoms has an oxygen bond and a carbon bond, and further at least some of the silicon atoms have a hydrogen bond. The interlayer insulating film is formed by chemical vapor deposition employing a mixed gas of hydrogen peroxide and a reactive gas having a gas molecular structure in which silicon atoms have a hydrogen bond and a carbon bond.

REFERENCES:
patent: 5656555 (1997-08-01), Cho
"Low Dielectric Constant Flowfill Technology for IMD Applications" Feb. 10-11, 1997 DUMIC Conference 1997 ISMIC pp. 34-40.
"Novel Self-planarizing CVD Oxide for Interlayer Dielectric Applications" IEDM 1994 pp. 117-120.
"A New Methylsilsesquioxane Spin-on-Polymer" Proceedings of the 48th Symposium on Semiconductors and Integrated Circuits Technology (1995) pp. 18-23.
"New Reflowable Organic Spin-On Glass for Advanced Gap-Filling and Planarization" Jun. 7-8, 1994 VMIC Conference 1994 ISMIC pp. 186-192.

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