MOS-controlled thyristor with current saturation characteristics

Details MOS-controlled thyristor with current saturation characteristics MOS-controlled thyristor with current saturation characteristics

1994-06-24

1996-03-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257132, 257133, 257138, 257146, 257154, 257163, H01L 2974, H01L 31111

Patent

active

054988845

ABSTRACT:
A MOS-controlled thyristor which has current saturation characteristics and does not have any parasitic thyristor structure. In some embodiments, the device has two gate drives and is a four terminal device. In other embodiments, the device requires only a single gate drive and is a three terminal device. The device can be constructed in a cellular geometry. In all embodiments, the device has superior turn-off characteristics and a wider Safe-Operating-Area because the N.sup.++ emitter/P base junction is reverse biased during turn-off.

REFERENCES:
patent: 5105244 (1992-04-01), Bauer
patent: 5198687 (1993-03-01), Boliga
patent: 5286981 (1994-02-01), Lilja et al.
patent: 5293054 (1994-03-01), Shakar et al.
patent: 5336907 (1994-08-01), Nakanishi et al.
patent: 5444272 (1995-08-01), Ajit

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