Complementary integrated circuit having N channel TFTs and P cha

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

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257 69, 257 72, 257351, H01L 2976

Patent

active

061246034

ABSTRACT:
The absolute value of the threshold voltage of a P-channel TFT is reduced by making its channel length shorter than that of an N-channel TFT by at least 20%, to thereby approximately equalize the threshold voltage absolute values of those TFTs.

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patent: 5430320 (1995-07-01), Lee
patent: 5514879 (1996-05-01), Yamazaki
patent: 5616935 (1997-04-01), Koyama et al.

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