Method for producing a Schottky barrier light detecting device

Details Method for producing a Schottky barrier light detecting device Method for producing a Schottky barrier light detecting device

1984-09-06

1986-05-20

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29572, 29591, H01L 21443

Patent

active

045891893

ABSTRACT:
A device for detecting light having an improved sensitivity and a method for producing the device. N.sup.+ source and drain regions are formed on a P-type silicon substrate. The substrate is then covered with an oxidation resistant layer of SiO.sub.2. A layer of Pt-Si is then deposited between the source and drain regions and a P-type polysilicon layer is deposited on the Pt-Si layer. The device is then annealed to form a Schottky junction between the polysilicon layer and the Pt-Si layer following which a gate electrode is formed on the polysilicon layer.

REFERENCES:
patent: 3996656 (1976-12-01), Cook
patent: 4128670 (1978-12-01), Gaensslen
patent: 4304042 (1981-12-01), Yeh
patent: 4305200 (1981-12-01), Fu et al.
patent: 4319395 (1982-03-01), Lund et al.
patent: 4329706 (1982-05-01), Crowder et al.

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