Method for treating a surface of a silicon single crystal and a

Details Method for treating a surface of a silicon single crystal and a Method for treating a surface of a silicon single crystal and a

1997-12-10

2000-09-26

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438906, 134 13, 117 89, 117102, 117 91, 117935, H01L 2100

Patent

active

061242098

ABSTRACT:
The surface of a silicon single crystal substrate 2 is exposed to a mixed gas of hydrogen fluoride gas and hydrogen gas at 0.degree. C.-100.degree. C. to remove a natural oxide film 3 formed on the surface of silicon single crystal substrate 2. The method, as a pre-treatment to the formation of a silicon single crystal thin film, gives a smooth surface with a low temperature treatment and without causing the out-diffusion of the dopants or the auto-doping phenomenon.

REFERENCES:
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patent: 5365877 (1994-11-01), Kubota
patent: 5403434 (1995-04-01), Moslehi
patent: 5489557 (1996-02-01), Jolley
patent: 5846321 (1998-12-01), Habuka et al.
patent: 5880031 (1999-03-01), Wong
Abstract, XP000422360, Vermuelen et al., Oct. 1993, A HF Vapor Etch Process for Integration in Cluster-Tool Processes: Characteristics and Applications Netherlands.

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