Method of manufacturing a semiconductor device having reliable m

Details Method of manufacturing a semiconductor device having reliable m Method of manufacturing a semiconductor device having reliable m

1995-06-01

1996-03-12

Quach, T. N.

Fishing, trapping, and vermin destroying

437194, 437195, 437197, H01L 21283

Patent

active

054985714

ABSTRACT:
An Al alloy interconnection layer is deposited on a silicon oxide layer, and a first carbon layer is formed on the Al alloy interconnection layer. Then, the first carbon layer and the Al alloy interconnection layer are patterned, thereby forming a first interconnection layer consisting of the Al alloy interconnection layer and the first carbon layer. Sequentially, a second carbon layer is formed on the first interconnection layer and the silicon oxide layer. The second carbon layer is entirely etched by the RIE method, thereby leaving the second carbon layer only on side surfaces of the first interconnection layer. A high temperature layer made of SiO.sub.2 is deposited on the second carbon layer, the first interconnection layer and the silicon oxide layer. Thereafter, the high temperature layer is etched back until the first carbon layer is exposed, thus being flattened. An interlayer insulating layer is deposited on the high temperature layer and the first interconnection layer.

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