Selective plasma etching of dielectric masks in the presence of

Details Selective plasma etching of dielectric masks in the presence of Selective plasma etching of dielectric masks in the presence of

1979-01-29

1980-10-14

Massie, Jerome W.

Chemistry: electrical and wave energy

Processes and products

29572, 29578, 29579, 156643, 156648, 156655, 156662, 204 23, 204 32S, 204 38A, 204192E, H01L 21283, H01L 21308, H01L 21326

Patent

active

042279755

ABSTRACT:
Plasma etching is described as a selective etch for dielectric masks such as SiO.sub.2, Si.sub.3 N.sub.4 and certain photoresists in the presence of native oxides of Group III-V compound semiconductors. This process can be used in the fabrication of mesa junction lasers and Burrus light emitting diodes.

REFERENCES:
patent: 3795557 (1974-03-01), Jacob
patent: 3867216 (1975-02-01), Jacob
patent: 3880684 (1975-04-01), Abe
patent: 3975252 (1976-08-01), Fraser et al.
patent: 4011113 (1977-03-01), Thompson et al.
patent: 4030967 (1977-06-01), Ingrey et al.
patent: 4110661 (1978-08-01), Harris et al.
Mogab et al., "Plasma . . . Undercutting", Electronics, vol. 51, No. 18, (8/78), pp. 117-121.
Burstell et al., "Preferential Etch . . . -GaAlAs", IBM Technical Disclosure Bull., vol. 20, No. 6, (11/77), p. 2451.

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