Method for producing a semiconductor device using delamination

Details Method for producing a semiconductor device using delamination Method for producing a semiconductor device using delamination

1998-08-25

2000-09-26

Fahmy, Wael

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

438455, 438149, 438151, 257354, 257347, 148DIG77, 148DIG150, H01L 2100, H01L 2130, H01L 2146, H01L 2712, H01L 310392

Patent

active

061241857

ABSTRACT:
A process for producing a metal oxide semiconductor (MOS) transistor is provided. At least two trenches are formed at a surface of a first substrate. Oxide is deposited onto the at least two trenches. The at least two trenches each have a surface spaced apart from the surface of the first substrate. A second substrate is placed onto the surface of the first substrate. A layer is delaminated from the first substrate. The layer includes the at least two oxide-filled trenches and a portion of the first substrate. The layer is then bonded to a second substrate. First and second active regions are then formed, in the portion of the first substrate, overlaying the surfaces of the at least two trenches.

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