Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1991-11-26
1993-11-30
Nguyen, Vinh
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324 731, G01R 3126
Patent
active
052668924
ABSTRACT:
A flat band voltage of a MIS structure is determined by measuring high-frequency C-V characteristics thereof, and a surface potential is calculated by the definite integral processing as a function of the flat band voltage. Ideal C-V characteristics of the MIS structure are determined from the surface potential. By comparing measured low-frequency or quasi-static C-V characteristics with the ideal C-V characteristics, the distribution of an interface state density is determined. Thus, the flat band voltage of an ideal C-V curve coincides with the flat band voltage of a low-frequency or quasi-static C-V curve, so that the interface state density distribution in the MIS structure can be accurately measured.
REFERENCES:
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patent: 4827212 (1989-05-01), Kamieniecki
S. M. Sze, Physics of Semiconductor Devices, 1982, pp. 378-391.
IEEE Transactions on Electron Devices, vol. ED-13, No. 10, pp. 701-705, C. N. Berglund, "Surface States at Steam-Grown Silicon-Silicon Dioxide Interfaces", Oct. 1966.
Solid State Electronics, vol. 13, pp. 873-885, 1970, "A Quasi-Static Technique for MOS C-V and Surface State Measurements", M. Kuhn.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Vinh
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