Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1976-09-07
1978-09-05
Zazworsky, John
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307252A, 307252G, 307252J, 307305, 307252D, 307252C, H03K 1772, H03K 1760
Patent
active
041123158
ABSTRACT:
A semiconductor switch circuit comprises a PNPN switch with a gate terminal and having an equivalently four-layered PNPN structure, and a load-current-dividing circuit including at least a transistor. The base and the collector of the transistor included in the load-current-dividing circuit are connected to the cathode and the anode of the PNPN switch, respectively. The load current is divided into two parts of the current. One part of the load current flows into the base of the transistor through the anode and the cathode of the PNPN switch, while the remaining part of the load current flows into the collector of the transistor. Since the greater part of the load current flows into the collector of the transistor, the PNPN switch is not burdened with a large current. Thus, the semiconductor switch circuit permits the gate turn-off operation of the PNPN switch with a self-holding ability, thereby making it possible to cut off a large current.
REFERENCES:
patent: 3526787 (1970-09-01), Stover
patent: 3590339 (1971-06-01), Bilo et al.
patent: 3619652 (1971-11-01), Ogle
patent: 3660698 (1972-05-01), Schisselbauer
patent: 3708672 (1973-01-01), Marinkovic
Hitachi , Ltd.
Zazworsky John
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