Method of making CCD having a single level electrode of single c

Details Method of making CCD having a single level electrode of single c Method of making CCD having a single level electrode of single c

1992-12-17

1994-04-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 84, 437 90, 148DIG111, H01L 21339

Patent

active

053025440

ABSTRACT:
A charge coupled device (CCD) has a single level electrode of single crystalline silicon on an insulating layer over a surface of a body of single crystalline silicon. The CCD is made by forming a layer of insulating material on a surface of a body of single crystalline silicon with a portion of the surface being exposed. A layer of single crystalline silicon is then epitaxially grown by epitaxial lateral overgrowth on the exposed surface of the body and over the insulating material layer. The layer of single crystalline silicon is removed from the surface of the body to insulate the single crystalline silicon layer from the body by the insulating material layer. Portions of the layer of single crystalline silicon are removed to form a plurality of separate gate electrodes.

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J. L. Glenn, Jr. et al., "A fully planar method for creating adjacent `self-isolating` silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowth", Applied Physics Letters, vol. 60(4), Jan. 27, 1992, pp. 483-485.

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