Method of manufacturing field effect transistor

Details Method of manufacturing field effect transistor Method of manufacturing field effect transistor

1993-05-21

1994-04-12

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437192, 437193, 437200, 437229, 156653, 156656, 156657, 1566591, H01L 21336

Patent

active

053025385

ABSTRACT:
When exposure light reaches a silicon oxide film, this light is multiply reflected in the silicon oxide film to spread or narrow a photoresist layer. A tungsten silicide film prevents the exposure light from reaching the silicon oxide film. This silicon oxide film is employed as a mask to selectively remove a polycrystalline silicon film and a tungsten silicide film by etching for forming a gate electrode, while the tungsten silicide film is simultaneously removed by this etching.

REFERENCES:
patent: 4838994 (1989-06-01), Gulde et al.
patent: 4892613 (1990-01-01), Motai et al.
patent: 5045150 (1991-09-01), Cleeves et al.
patent: 5066615 (1991-11-01), Brady et al.
patent: 5106786 (1992-04-01), Brady et al.
patent: 5118384 (1992-06-01), Harmon et al.

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