Method of forming self-aligned contacts using the local oxidatio

Details Method of forming self-aligned contacts using the local oxidatio Method of forming self-aligned contacts using the local oxidatio

1993-03-12

1993-11-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437968, 437983, 437984, 148DIG117, H01L 2128

Patent

active

052665232

ABSTRACT:
Self-aligned contacts are formed between a first layer of material which can be oxidized, such as polycrystalline silicon (poly 1), and a second layer of material such as metal or polycrystalline silicon (poly 2). A patterned layer of material, such as nitride, that prevents the first layer from oxidizing is deposited over the poly 1 layer. The exposed poly 1 material is oxidized, while the poly 1 material covered by the nitride is protected from oxidization. The nitride is removed and another layer of conductive material is formed, and thus contacts the poly 1 layer which was protected from oxidation, while the oxide insulates the other poly 1 areas.

REFERENCES:
patent: 4625391 (1986-12-01), Sasaki
patent: 4824794 (1989-04-01), Tabata et al.
patent: 5061646 (1991-10-01), Sivan et al.
patent: 5114872 (1992-05-01), Roselle et al.

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