Method for forming a metal conductor in semiconductor device

Details Method for forming a metal conductor in semiconductor device Method for forming a metal conductor in semiconductor device

1992-11-12

1993-11-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437230, 437235, 437190, 427 98, H01L 21445

Patent

active

052665194

ABSTRACT:
An oxidizable metal film and a barrier metal film are formed in the named order on an insulating film formed on a semiconductor substrate or in a contact hole formed through the insulating film. A gold film is selectively formed on the barrier metal film in alignment with the contact hole. The barrier metal is selectively removed using the gold film as a mask, and an exposed surface of the oxidizable metal film is oxidized. A second metal film is deposited on only a surface of the gold film by an electroplating using the oxidized surface of the oxidizable metal film as an anti-plating mask. Finally, the oxidizable metal film not covered by the gold film is completely oxidized.

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