Method for forming a sealed interface on a semiconductor device

Details Method for forming a sealed interface on a semiconductor device Method for forming a sealed interface on a semiconductor device

1991-12-17

1993-11-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 83, 437193, 437195, 437228, H01L 2120

Patent

active

052665178

ABSTRACT:
According to the invention, a semiconductor device is provided at the face of a substrate. A layer of insulator is formed adjacent the face of substrate, layer of insulator having a window disposed therethrough. A region of epitaxially semiconductor is disposed in window informs an interface with adjacent portions of layer of insulator. A seal is provided at interface of the region of epitaxial semiconductor and the layer of insulator.

REFERENCES:
patent: 4101350 (1978-07-01), Possley et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4952526 (1990-08-01), Pribat et al.
patent: 4965219 (1990-10-01), Cerofolini
patent: 5124276 (1992-06-01), Samata et al.

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