Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1996-07-22
1997-12-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257472, 257744, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
056988702
ABSTRACT:
A periodic table group III-IV HEMT/PHEMT field-effect transistor device and its fabrication is described. The disclosed fabrication arrangement uses a single metallization for ohmic and Schottky barrier contacts, employs selective etching with a permanent etch stop layer, employs a non-alloyed ohmic contact semiconductor layer and includes a permanent non photoresponsive secondary mask element affording several practical advantages during fabrication and in the completed transistor. The invention includes provisions for both an all-optical lithographic fabrication process and a combined optical and electron beam lithographic process. These concepts are combined to provide a field-effect transistor device of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.
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Bozada Christopher A.
DeSalvo Gregory C.
Dettmer Ross W.
Ebel John L.
Gillespie James K.
Crane Sara W.
Hollins Gerald B.
Kundert Thomas L.
The United States of America as represented by the Secretary of
Wille Douglas
LandOfFree
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