Device and substrate orientation for defect reduction and transi

Details Device and substrate orientation for defect reduction and transi Device and substrate orientation for defect reduction and transi

1991-08-23

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437946, 148DIG115, H01L 2172

Patent

active

051717034

ABSTRACT:
Methods of forming a semiconductor substrate and a device oriented substantially along a crystal direction other than a crystal direction that falls along a cleavage plane and the substrate and device formed by each method are disclosed. An ingot of monocrystalline material is formed and marked to denote a crystal direction other than a crystal direction that falls along a cleavage plane. The ingot is lapped to form a semiconductor substrate having a mark denoting a crystal direction other than a crystal direction that falls along a cleavage plane. A device is formed on the semiconductor substrate having a monocrystalline layer, such that a field oxide-active area edge or a gate electrode lies substantially along a crystal direction other than a crystal direction that falls along a cleavage plane. The present invention may be used on any device where dislocation defects, a lateral diffusion, or a lateral oxidation is to be minimized.

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Bean, et al.; "The Influence of Crystal Orientation on Silicon Semiconductor Processing"; Proceedings of the IEEE; vol. 57; No. 9; 1969; pp. 1469-1476.
Claeys, et al.; "Defect Control in Si.sub.3 N.sub.4 /SiO.sub.2 Structures for Isolation Techniques"; VLSI Science and Technology-1984; Proceedings vol. 84-7; Electrochemical Society; 1984; pp. 272-287.
Colclaser; Microelectronics: Processing and Device Design; 1980; pp. 53-72.
Sze; VLSI Technology; 1983; pp. 9-50.

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