Method of forming multiple layer collector structure for bipolar

Details Method of forming multiple layer collector structure for bipolar Method of forming multiple layer collector structure for bipolar

1991-06-28

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437909, 148DIG11, 148DIG72, H01L 21265

Patent

active

051716976

ABSTRACT:
Generally, and in one form of the invention, a multiple layer collector structure is provided which comprises a relatively thin, highly doped layer 12 and a relatively thick, low doped or non-intentionally doped layer 14.

REFERENCES:
patent: 4751195 (1988-06-01), Kawai
patent: 4825269 (1989-04-01), Plummer et al.
patent: 4839303 (1989-06-01), Tully et al.
patent: 5012318 (1991-04-01), Honjo
patent: 5017517 (1991-05-01), Mochizuki et al.
Kirk, "A Theory of Transistor Cutoff Frequency (fr) Falloff at High Current Densities", IRE Transactions on Electron Devices, ED-9, p. 164, 1962.
Sze, Physics of Semiconductor Devices, 2nd Edition, pp. 145-147, (Wiley & Sons, 1981).
Pritchard, Electrical Characteristics of Transistors, pp. 297-298, (McGraw Hill, 1967).
Bulman, et al., "The Determination of Impact Ionization Coefficients in (100) Gallium Arsenide Using Avalanche Noise and Photocurrent Multiplication Measurements", IEEE Transactions on Electron Devices, ED-32, p. 2454, 1985.

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