Semiconductor pressure sensor including multiple silicon substra

Details Semiconductor pressure sensor including multiple silicon substra Semiconductor pressure sensor including multiple silicon substra

1992-06-24

1994-08-09

Chilcot, Jr., Richard E.

Measuring and testing

Fluid pressure gauge

Diaphragm

296211, G01L 906

Patent

active

053355504

ABSTRACT:
A small, precise semiconductor pressure sensor has a flat, thin diaphragm of uniform thickness that is formed by a simple process. A first silicon substrate and a second silicon substrate are bonded to each other with an interface insulating film interposed between them and circuitry including gauge resistors is fabricated on the primary surface of the second silicon substrate. The interface insulating film may be disposed in the recess of a vacuum chamber and may have a two layer structure. If alignment marks are formed, the circuitry can be accurately formed relative to the vacuum chamber.

REFERENCES:
patent: 4766666 (1988-08-01), Sugiyama et al.
patent: 4771639 (1988-09-01), Saigusa et al.
patent: 4881410 (1989-11-01), Wise et al.
patent: 4930353 (1990-06-01), Kato et al.
patent: 5070735 (1991-12-01), Reichert et al.
patent: 5145810 (1992-09-01), Matsumi

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