Thin film field-effect transistors with tolerance to electrode m

Details Thin film field-effect transistors with tolerance to electrode m Thin film field-effect transistors with tolerance to electrode m

1984-10-05

1986-06-24

Edlow, Martin H.

357 2, H01L 2978

Patent

active

045970017

ABSTRACT:
In a thin film field-effect transistor, source and drain electrodes each include at least one, respective, narrowed, elongated portion. These elongated source and drain portions are oriented in parallel and in adjacent relation to each other, and a respective, complete longitudinal section of each elongated portion overlays a gate electrode. The resulting FET may be fabricated with readily-achievable photolithographic alignment precision as between the source and drain electrode configuration and the gate electrode, and achieves acceptably low source-to-gate and drain-to-gate parasitic capacitances.

REFERENCES:
patent: 3385731 (1968-05-01), Weimer
Hayama et al., Appl. Phys. Lett., 36(9) May 1, 1980 pp. 754-755.

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