Junction field effect transistor having a substantially quadrati

Details Junction field effect transistor having a substantially quadrati Junction field effect transistor having a substantially quadrati

1982-06-16

1985-02-05

Edlow, Martin H.

357 86, 357 23, H01L 2980

Patent

active

044980949

ABSTRACT:
A substantially quadratic relationship between the channel current I.sub.DS and the gate voltage V.sub.GS is obtained over a substantial portion of the operating characteristic of a junction field effect transistor by the unique combination of two design features. First, a high-ohmic substrate sub-region is provided adjoining the channel region of the device, and second, the surface-adjoining source region is electrically connected to the underlying substrate. By using these two features, the value of the quantity .beta. is maintained substantially constant over the range of gate-to-source voltages of from zero volts to pinch-off.

REFERENCES:
patent: 3222810 (1965-12-01), Evans et al.
patent: 3283221 (1966-11-01), Heiman
patent: 3316131 (1967-04-01), Wisman
patent: 3656031 (1972-04-01), Bresee et al.
patent: 4112455 (1978-09-01), Seliger et al.
patent: 4119996 (1978-10-01), Jhabvala
patent: 4176368 (1979-11-01), Compton
patent: 4233615 (1980-11-01), Takemoto et al.
Sze, "Physics of Semiconductor Devices," 1969, Wiley, N.Y., p. 350.

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