1974-05-03
1976-02-24
Edlow, Martin H.
357 16, 357 48, 357 17, 357 61, H01L 2906, H01L 29161
Patent
active
039407845
ABSTRACT:
A semiconductor device having a monocrystalline semiconductor layer provided on a surface comprising at least one region obtained by diffusion of a doping impurity whose width from the surface of the semiconductor layer in the direction of the substrate first increases and than decreases while the chemical composition of the semiconductor layer on the substrate side differs from that at the surface.
REFERENCES:
patent: 3529217 (1970-09-01), Van Santen
Edlow Martin H.
Nigohosian Leon
Trifari Frank R.
U.S. Philips Corporation
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2082895