Semiconductor device

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Details

357 16, 357 48, 357 17, 357 61, H01L 2906, H01L 29161

Patent

active

039407845

ABSTRACT:
A semiconductor device having a monocrystalline semiconductor layer provided on a surface comprising at least one region obtained by diffusion of a doping impurity whose width from the surface of the semiconductor layer in the direction of the substrate first increases and than decreases while the chemical composition of the semiconductor layer on the substrate side differs from that at the surface.

REFERENCES:
patent: 3529217 (1970-09-01), Van Santen

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