Post-exposure bake simulator for chemically amplified photoresis

Details Post-exposure bake simulator for chemically amplified photoresis Post-exposure bake simulator for chemically amplified photoresis

1995-06-06

1998-02-10

Teska, Kevin J.

Boots, shoes, and leggings

395500, 3642212, 3642323, 3642234, G06F 9455

Patent

active

057176124

ABSTRACT:
A system that simulates the physics of chemically amplified photoresist during bake processing after X-ray or ultraviolet exposure and before development. The simulator implements a physical model including both kinetic reaction between photoacid and tBOC, and photoacid diffusion. The simulator is supplied with initial post-exposure bake parameters, for example, PEB time and temperature, selected for baking a particular photoresist. Data for implementing the physical model at the selected PEB time and temperature are established experimentally and supplied to the PEB simulator to determine the photoacid concentration in the photoresist. The tBOC concentration is calculated using the value of the photoacid concentration.

REFERENCES:
patent: 5067101 (1991-11-01), Kunikiyo et al.
patent: 5282140 (1994-01-01), Tazawa et al.
patent: 5363171 (1994-11-01), Mack
Bernard, D.A. "Simulation of PEB effects on Photo. Performance of a Resist Film" Philips Journal of Research, vol. 42, No. 5/6, 1987, pp. 566-582.

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